2 inch silicon carbide wafer (4H-N type, double side polished)6_4H-N Type_Silicon Carbide Wafer (SiC Wafer)_Products

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Specification

Item	4H n-type SiC substrate
Diameter	4H n-type SiC substrate
Thickness	4H n-type SiC substrate
Surface Orientation	4H n-type SiC substrate
Primary Flat Orientation	4H n-type SiC substrate
Primary Flat Length	4H n-type SiC substrate
Secondary Flat Orientation	Silicon face up: 90° CW. from Primary flat±5.0°

Customization specifications：

* Various sizes and shapes such as 10*10mm

* Various thicknesses:0.1~20mm

* Various orientations such as Off-Axis：8°toward <11-20>±0.5°

* Various surface roughness such as slicing,lapping,polishing.

* Silicon carbide crystal ingots are available.

Properties

Item	4H n-type SiC substrate
Diameter	4H n-type SiC substrate
Thickness	4H n-type SiC substrate
Surface Orientation	4H n-type SiC substrate
Primary Flat Orientation	4H n-type SiC substrate
Primary Flat Length	4H n-type SiC substrate

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2 inch silicon carbide wafer (4H-N type, double side polished)6

Thickness

350μm
1000μm
3000μm

Quantity

$1,112.00 ~ 3,333.00

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DESCRIPTION

2-inch conductive silicon carbide (SiC) substrates feature high thermal conductivity, high breakdown electric field, and excellent high-temperature stability, making them ideal for power devices, RF applications, and new energy technologies. Manufactured from high-quality single-crystal SiC material, the substrates offer low defect density and stable electrical performance for epitaxial growth and device fabrication. Various orientations, doping types, and surface finishing specifications are available to meet both research and industrial requirements.