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Specification
Item Patterned Sapphire Substrate(2~6inch)
Diameter 50.8 ± 0.1 mm 100.0 ± 0.2 mm 150.0 ± 0.3 mm
Thickness 430 ± 25μm 650 ± 25μm 1000 ± 25μm
Surface Orientation C-plane (0001) off-angle toward M-axis (10-10) 0.2 ± 0.1°
C-plane (0001) off-angle toward A-axis (11-20) 0 ± 0.1°
Primary Flat Orientation A-Plane (11-20) ± 1.0°
Primary Flat Length 16.0 ± 1.0 mm 30.0 ± 1.0 mm 47.5 ± 2.0 mm
R-Plane 9-o'clock
Front Surface Finish Patterned
Back Surface Finish SSP:Fine-ground,Ra=0.8~1.2μm; DSP:Epi-polished,Ra<0.3nm
Laser Mark Back side
TTV ≤8μm ≤10μm ≤20μm
BOW ≤10μm ≤15μm ≤25μm
WARP ≤12μm ≤20μm ≤30μm
Edge Exclusion ≤2 mm
Pattern Specification Shape Structure Dome, Cone, Pyramid
Pattern Height 1.6~1.8μm
Pattern Diameter 2.75~2.85μm
Pattern Space 0.1~0.3μm

Pattern Micrographs


Customization specifications:

* Nanometer patterned sapphire substrate(NPSS).

* Sapphire PSS of various orientations.


Properties

Patterned sapphire substrate(PSS) is a process of making some specific micrometer pattern like Dome,Cone or Pyramid-shaped on the sapphire substrate.Uneven patterns on sapphire substrates can generate light scattering or refraction,thereby improving the luminous efficiency.


Crystal Structure Hexagonal
Lattice Constant(nm) α=4.76Å c=12.99Å
Density(g/cm³) 3.98
Melting point (℃) 2040
Mohs Hardness(mohs) 9
Dielectric Constant 9.3(A plane)
11.5(C plane)
Thermal Conductivity(W/cm·K) 0.46
Thermal Expansion 6.7*10⁻⁶/k(C plane)    5.0*10⁻⁶/k(A plane)
Refractive Index 1.762-1.777
Transmission Test sample:Sapphire: D76.2*4mm
UV:200~380nm  74%~84%
Visible light: 380~760nm  85%
Infrared: 760~1000nm  85%
Far-Infrared: >1000nm  80%~100%
SKU: --
Patterned Sapphire Substrate(PSS)
Thickness
  • 350μm
  • 1000μm
  • 3000μm
Pieces
  • 1pcs
  • 15pcs
  • 100pcs
Stock: 89999991
Quantity
$11.00 ~ 99.00

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DESCRIPTION
GaN epi-layer grown on PSS produces epitaxial lateral and less interstitial defects between GaN and sapphire substrates.Moreover the lattice parameters of PSS are better matched to GaN and the epitaxial growth of GaN on PSS generates less densities of dislocations and refractive index mismatch,thereby improving the quality of epitaxy.
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