Specification
| Item | Silicon Substrate（2~12inch） | |||||
| Diameter | 50.8mm | 76.2mm | 100mm | 150mm | 200mm | 300mm |
| Thickness | 400μm | 400μm | 500μm | 625μm | 725μm | 775μm |
| Surface Orientation | <100> | <111> | <110> | |||||
| Crystal Growth Method | CZ | FZ | |||||
| Dopant | N-type(Si-doping/As-doping/Sb-doping) | P-type(B-Doping) | Intrinsic | |||
| Primary Flat Length | 16mm | 22mm | 32.5mm | 47.5mm | Notch | Notch |
| Resistivity | 0.001-0.005ohm-cm | 1-100ohm-cm | >10000ohm-cm | |||
| Front Surface Finish | Epi-polished,Ra<0.5nm | |||||
| Back Surface Finish | SSP:Etch; DSP:Epi-polished,Ra<0.5nm | |||||
| TTV | ≤8μm | ≤10μm | ≤10μm | ≤20μm | ≤30μm | ≤30μm |
| BOW | ≤10μm | ≤12μm | ≤15μm | ≤25μm | ≤40μm | ≤45μm |
| WARP | ≤12μm | ≤15μm | ≤20μm | ≤30μm | ≤60μm | ≤60μm |
| Edge Exclusion | ≤2 mm | ≤3 mm | ||||
Customization specifications：
* Various sizes and shapes such as 10*10mm
* Various thicknesses: 0.1~20mm
* Various surface roughness such as slicing,lapping,polishing.
* Silicon crystal ingots are available.
Properties
Silicon wafers possess excellent electrical properties, such as precisely controlled resistivity and carrier concentration, ensuring stable and reliable device performance. They have superior thermal properties, including high thermal conductivity and good thermal stability, which help with heat dissipation and maintaining chip performance. Additionally, they exhibit outstanding mechanical properties, such as high hardness, excellent flatness, and low defect density, enabling precise processing and thinning.
| Growth Method | CZ/FZ |
| Crystal Structure | Diamond |
| Lattice Constant(nm) | α=5.4305Å |
| Density(g/cm³) | 2.329 |
| Melting point | 1410℃ |
| Mohs Hardness(mohs) | 7 |
| Dielectric Constant | 11.8 |
| Band Gap(eV) | 1.1 |
| Breakdown Electrical Field (MV/cm) | 0.3 |
| Thermal Conductivity(n-type) (W/cm·K) | 1.48 |
| Electron Mobility(cm²·V⁻¹·s⁻¹) | 1480 |
| Thermal Expansion | 2.6×10⁻⁶/℃ |
| Refractive Index | 3.5 |
