Specification
| Item | 4H Semi-Insulating SiC substrate |
| Diameter | 200±0.3mm |
| Thickness | 500±25μm |
| Surface Orientation | <0001> ± 0.2° |
| Primary Flat Orientation | <1-100>±5° |
| Primary Flat Length | Notch |
| Secondary Flat Orientation | N/A |
| Secondary Flat Length | N/A |
| Resistivity | ≥1E7 Ω·cm |
| Front Surface Finish | Si-Face: CMP, Ra<0.5nm |
| Back Surface Finish | C-Face: Optical Polish, Ra<1.0nm |
| Laser Mark | Back side: C-Face |
| TTV | ≤20μm |
| BOW | ≤60μm |
| WARP | ≤80μm |
| Edge Exclusion | ≤3 mm |
Customization specifications：
* Various sizes and shapes such as 10*10mm
* Various thicknesses: 0.1~20mm
* Various orientations such as Off-Axis：8°toward <11-20>±0.5°
* Various surface roughness such as slicing,lapping,polishing.
* Silicon carbide crystal ingots are available.
Properties
| Crystal Structure | Hexagonal |
| Lattice Constant(nm) | α=3.076Å c=10.053Å |
| Density(g/cm³) | 3.21 |
| Melting point（℃） | 2830 |
| Mohs Hardness(mohs) | 9.2 |
| Dielectric Constant | 9.66 |
| Band Gap(eV) | 3.26 |
| Breakdown Electrical Field (MV/cm) | 3.1 |
| Thermal Conductivity(W/cm·K) | 4.5 |
| Thermal Expansion | 4.7*10⁻⁶/K |
| Refractive Index | 2.6767 ~ 2.6480 |
