Our 4H-N type silicon carbide square substrates come in four regular sizes including 5×5mm, 10×10mm, 15×15mm and 20×20mm with double-side polishing, featuring low surface roughness to satisfy strict surface requirements for scientific research. Boasting outstanding thermal conductivity, high temperature and voltage resistance as well as stable carriers, these SiC wafers fit high-temperature electrical testing, GaN epitaxy, magnetron sputtering and device packaging prototyping. Developed specially for research and trial production to cut material cost for single samples, the products support customization of thickness and doping parameters, widely applied in laboratories of universities and enterprise R&D departments for small-scale experiments of third-generation semiconductors.