Specification
| Item | Patterned Sapphire Substrate | |
| Diameter | 100.0±0.2mm | |
| Thickness | 650±25μm | |
| Surface Orientation | C-M plane 0.2° | |
| Primary Flat Orientation | A-Plane (11-20) ± 1.0° | |
| Primary Flat Length | 30.0±1.0mm | |
| Front Surface Finish | Patterned | |
| Back Surface Finish | Single side polished | |
| Laser Mark | Back side | |
| TTV | ≤10μm | |
| BOW | ≤15μm | |
| WARP | ≤20μm | |
| Edge Exclusion | ≤3 mm | |
| Pattern Specification | Shape Structure | Dome, Cone,Pyramid |
| Pattern Height | 1.6~1.8μm | |
| Pattern Diameter | 2.75~2.85μm | |
| Pattern Space | 0.1~0.3μm | |
| Pattern Micrographs |
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Customization specifications：
* Nanometer patterned sapphire substrate（NPSS）.
* Sapphire PSS of various orientations.
Properties
| Crystal Structure | Hexagonal |
| Lattice Constant(nm) | α=4.76Å c=12.99Å |
| Density(g/cm³) | 3.98 |
| Melting point (℃) | 2040 |
| Mohs Hardness(mohs) | 9 |
| Dielectric Constant | 9.3(A plane) 11.5(C plane) |
| Thermal Conductivity(W/cm·K) | 0.46 |
| Thermal Expansion | 6.7*10⁻⁶/k(C plane) 5.0*10⁻⁶/k(A plane) |
| Refractive Index | 1.762-1.777 |
| Transmission | Test sample:Sapphire: D76.2*4mm |
| UV:200~380nm 74%~84% | |
| Visible light: 380~760nm 85% | |
| Infrared: 760~1000nm 85% | |
| Far-Infrared: >1000nm 80%~100% |
