2‑inch AlN on Sapphire Epitaxial Wafer (AlN template) is high‑quality undoped aluminum‑nitride thin‑film epitaxially grown on C‑plane sapphire substrate. Featuring wide band‑gap, excellent ultraviolet transparency, high thermal conductivity, low defect density and epi‑ready ultra‑smooth surface, it serves as an ideal template for subsequent AlGaN / GaN epitaxy. Widely applied in DUV‑LED, UV laser, high‑frequency RF‑HEMT and nitride‑based semiconductor research. Custom AlN film thickness, surface roughness and cleaning grade are available upon request.