2 inch SiC on SiC Homoepitaxial Wafer_Silicon Carbide Epitaxial Wafer_Silicon Carbide Wafer (SiC Wafer)_Products

REQUEST QUOTE

Home/ Products / Silicon Carbide Wafer (SiC Wafer) / Silicon Carbide Epitaxial Wafer

Specification

1. Structure

2.Epitaxial Parameters

Item	Thickness	Doping type	Doping Concentration
Epitaxial layer	10μm	P type/N type	1E14~1E19cm^-3
Buffer	1μm	N-type	1.00E±18cm^-3

3.Substrate Parameters

Substrate Diameter: 50.8±0.3mm
Substrate Thickness: 350±25μm
Substrate Type: 4H-N type

4. Reference:

1"/2"/3"/ 4"/ 6" SiC substrate(10*10mm etc.) is available.
4H and 6H SiC substrates are available.
Thickness uniformity < 10%
Wafer Bow<60um,Typical
N-type, p-type or semi-insulating SiC epitaxial layers is available.

Epitaxial structure and substrate specifications can be customized, Contact: anna@jxtwafer.com，shirley@jxtwafer.com

SKU: --

2 inch SiC on SiC Homoepitaxial Wafer

Thickness

350μm

Epitaxial

10μm

Pieces

1pcs
10pcs
50pcs

Stock： 299997

Quantity

$180.00 ~ 500.00

ADD TO CART

DESCRIPTION

Our 2‑inch SiC on SiC epitaxial wafer adopts high‑grade monocrystalline silicon‑carbide substrate, with high‑quality homo‑epitaxial film chemically‑deposited upon the base wafer.

Strict‑controlled epitaxial‑layer thickness, uniform doping concentration and low surface‑defect density guarantee outstanding electrical performance. We supply N‑type and P‑type epitaxial wafers, customizable on epitaxy thickness, doping density and surface finishing.

Perfect for manufacturing SiC‑SBD, MOSFET, power‑switching chips, high‑frequency RF components and laboratory device‑fabrication research.