Our 4‑inch SiC‑on‑SiC homoepitaxial wafer is manufactured by growing high‑quality SiC epitaxial layer onto polished single‑crystal silicon‑carbide substrate via CVD technology.

Features outstanding epitaxial‑layer thickness uniformity, low surface defect density and controllable doping concentration. N‑type and P‑type conductivity types are available. Custom‑made epitaxy thickness and doping parameters are acceptable.

This homo‑epi wafer is well‑suited for SiC MOSFET, Schottky barrier diodes, high‑voltage power switches, radio‑frequency devices and semiconductor‑related laboratory research.