Our 6-inch SiC-on-SiC homoepitaxial wafer is produced by high-precision CVD epitaxy growth on premium monocrystalline SiC substrate. It features excellent thickness uniformity, ultra-low defect density, and highly stable and controllable doping distribution. Available in N-type and P-type with customizable epitaxial thickness and doping concentration. With larger size, higher flatness and better batch consistency, this wafer is ideal for mass production of high-voltage SiC MOSFETs, SBDs, power electronic devices and high-frequency RF components. It is also widely used for advanced semiconductor research and device prototyping.