1010mm SiC on SiC Homoepitaxial Wafer_Silicon Carbide Epitaxial Wafer_Silicon Carbide Wafer (SiC Wafer)_Products

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Specification

1. Structure

2.Epitaxial Parameters

Item	Thickness	Doping type	Doping Concentration
Epitaxial layer	10μm	P type/N type	1E14~1E19cm^-3
Buffer	1μm	N-type	1.00E±18cm^-3

3.Substrate Parameters

Substrate Diameter: 10*10mm
Substrate Thickness: 350±25μm
Substrate Type: 4H-N type

4. Reference:

1"/2"/3"/ 4"/ 6" SiC substrate(5*5mm etc.) is available.
4H and 6H SiC substrates are available.
Thickness uniformity < 10%
Wafer Bow<60um,Typical
N-type, p-type or semi-insulating SiC epitaxial layers is available.

Epitaxial structure and substrate specifications can be customized, Contact: anna@jxtwafer.com，shirley@jxtwafer.com

SKU: --

10*10mm SiC on SiC Homoepitaxial Wafer

Thickness

350μm

Epitaxial

10μm

Pieces

1pcs
10pcs
50pcs

Stock： 299997

Quantity

$30.00 ~ 100.00

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DESCRIPTION

This square‑shaped SiC homoepitaxial specimen adopts premium polished silicon‑carbide substrate. High‑quality SiC epitaxial film is deposited by CVD process.

It boasts favourable thickness uniformity, low surface‑defect density and adjustable doping concentration. Both N‑type and P‑type are optional.

The compact 10*10 mm substrate is perfectly suited for laboratory epitaxy tests, material characterization, SEM‑TEM inspection, small‑scale device prototyping, high‑temperature‑resistant component and optoelectronic‑related research. Research‑grade stock is available, and custom requirements on epitaxial‑layer parameter are welcomed.