Specification
| Item | Sapphire Substrate |
| Diameter | 50.8±0.1mm |
| Thickness | 430±25μm |
| Surface Orientation | A-M plane 7° OR R-M plane 3° |
| Primary Flat Orientation | A-plane ± 0.3° |
| Primary Flat Length | 16.0±1.0mm |
| Surface Finish | Single side polished |
| Laser Mark | Back side |
| TTV | ≤8μm |
| BOW | ≤10μm |
| WARP | ≤12μm |
| Edge Exclusion | ≤3 mm |
Customization specifications：
* Various orientations such as A/R/M/N Plane, C off M(1°-10°), C off A(1°-10°).
* Various sizes and shapes such as 10*10mm,12inch
* Various thicknesses: 0.1~20mm
* Various surface roughness such as slicing,lapping,polishing.
* Sapphire crystal ingots are available.
Properties
| Crystal Structure | Hexagonal |
| Lattice Constant(nm) | α=4.76Å c=12.99Å |
| Density(g/cm³) | 3.98 |
| Melting point (℃) | 2040 |
| Mohs Hardness(mohs) | 9 |
| Dielectric Constant | 9.3(A plane) 11.5(C plane) |
| Thermal Conductivity(W/cm·K) | 0.46 |
| Thermal Expansion | 6.7*10⁻⁶/k(C plane) 5.0*10⁻⁶/k(A plane) |
| Refractive Index | 1.762-1.777 |
| Transmission | Test sample:Sapphire: D76.2*4mm |
| UV:200~380nm 74%~84% | |
| Visible light: 380~760nm 85% | |
| Infrared: 760~1000nm 85% | |
| Far-Infrared: >1000nm 80%~100% |
