Specification
| Item | 4H-P type SiC substrate |
| Diameter | 100±0.3mm |
| Thickness | 350±25μm |
| Surface Orientation | Off-Axis: 4° toward <11-20>±0.5° |
| Primary Flat Orientation | Parallel to <10-20>±5° |
| Primary Flat Length | 32.5±1.5mm |
| Secondary Flat Orientation | Silicon face up: 90° CW. from Primary flat±5.0° |
| Secondary Flat Length | 18.0±1.5mm |
| Resistivity | 0.1-0.5Ω·cm |
| Surface Finish | DSP |
| Laser Mark | Back side: C-Face |
| TTV | ≤10μm |
| BOW | ≤25μm |
| WARP | ≤30μm |
| Edge Exclusion | ≤3 mm |
Customization specifications：
* Various sizes and shapes such as 10*10mm
* Various thicknesses: 0.1~20mm
* Various orientations such as Off-Axis：8°toward <11-20>±0.5°
* Various surface roughness such as slicing,lapping,polishing.
* Silicon carbide crystal ingots are available.
Properties
| Crystal Structure | Hexagonal |
| Lattice Constant(nm) | α=3.076Å c=10.053Å |
| Density(g/cm³) | 3.21 |
| Melting point（℃） | 2830 |
| Mohs Hardness(mohs) | 9.2 |
| Dielectric Constant | 9.66 |
| Band Gap(eV) | 3.26 |
| Breakdown Electrical Field (MV/cm) | 3.1 |
| Thermal Conductivity(W/cm·K) | 4.5 |
| Thermal Expansion | 4.7*10⁻⁶/K |
| Refractive Index | 2.6767 ~ 2.6480 |
